Transport Properties
From Thermal-FluidsPedia
The thermophysical properties of various gaseous precursors are necessary to utilize the transport models outlined above. Since the temperature varies significantly throughout a CVD system, the transport phenomena must be modeled using variable thermal physical properties. This requires knowledge of the dependence of the thermophysical properties on temperature. The thermophysical properties of the commonly used gas(es) in CVD are tabulated in Table 1.
The viscosity and thermal conductivity of some precursors that are not readily available can be estimated using the method recommended by Bird et al. (2002). The viscosity is

Properties | Gas(es) | c0 | c1 | c2 |
μa (N-s/m2) | TMGa | -1.15 × 10-6 | 3.35 × 10-8 | -6.68 × 10-12 |
AsH3 | -4.32 × 10-7 | 5.94 × 10-8 | -1.46 × 10-11 | |
H2 | 2.63 × 10-6 | 2.22 × 10-8 | -5.19 × 10-12 | |
N2 | 4.93 × 10-6 | 4.55 × 10-8 | -1.08 × 10-11 | |
SiH4 | 1.47 × 10-6 | 3.66 × 10-8 | -6.81 × 10-12 | |
ka(W/m-K) | TMGa | -3.52 × 10-3 | 3.85 × 10-5 | -3.84 × 10-8 |
AsH3 | -7.16 × 10-3 | 6.53 × 10-5 | -3.47 × 10-9 | |
H2 | 5.77 × 10-2 | 4.43 × 10-4 | -7.54 × 10-8 | |
N2 | 8.15 × 10-3 | 6.24 × 10-5 | -4.48 × 10-9 | |
SiH4 | -2.12 × 10-2 | 1.45 × 10-4 | -1.31 × 10-8 | |
cpa (kJ/Kg-K) | TMGa | 5.40 × 102 | 1.60 | 0 |
AsH3 | 2.45 × 102 | 1.08 × 100 | -4.24 × 10-4 | |
H2 | 1.44 × 104 | -2.61 × 10-1 | 8.67 × 10-4 | |
N2 | 1.03 × 103 | 4.58 × 10-3 | 1.34 × 10-4 | |
SiH4 | 4.74 × 102 | 3.26 | -1.08 × 10-3 | |
D12b (m2/s) | SiH4, N2 | -9.64 × 10-1 | 6.25 × 10-3 | 8.50 × 10-6 |
SiH4, H2 | -2.90 | 2.06 × 10-2 | 2.81 × 10-5 | |
N2, H2 | -3.20 | 2.44 × 10-2 | 3.37 × 10-5 | |
TMGa, H2 | -1.87 | 1.64 × 10-2 | 3.13 × 10-5 | |
TMGa, N2 | -4.17 × 10-1 | 2.89 × 10-3 | 4.93 × 10-6 | |
AsH3, H2 | -2.26 | 1.73 × 10-2 | 2.80 × 10-5 | |
AsH3, N2 | -6.15 × 10-1 | 4.57 × 10-3 | 7.49 × 10-6 | |
TMGa, AsH3 | -2.26 × 10-1 | 1.27 × 10-3 | 3.18 × 10-6 | |
k12Tc | H2,SiH4 | -2.74 × 10-1 | -1.70 | -6.35 × 10-3 |
N2,SiH4 | -5.15 × 10-2 | -1.69 | -4.94 × 10-3 | |
H2,N2 | -2.71 × 10-1 | -1.61 | -9.15 × 10-3 | |
TMGa, H2 | 1.32 | -1.54 | -3.57 × 10-3 | |
TMGa, N2 | 6.36 × 10-1 | -1.58 | -3.36 × 10-3 | |
AsH3,H2 | 8.86 × 10-1 | -1.57 | -4.35 × 10-3 | |
AsH3, N2 | 3.09 × 10-1 | -1.55 | -4.06 × 10-3 | |
TMGa, AsH3 | 1.94 × 10-1 | -1.79 | -1.91 × 10-3 |
a μ,k,cp = c0 + c1T + c2T2; b ; c
T is absolute temperature (K);
where M is the molecular mass and σ is the collision diameter (Å= 10-10 m) of the molecule that can be estimated by

or

where and
are the specific volumes (cm3/mol) of the precursor at critical point, and of the saturated liquid at normal boiling point, respectively.
The collision integral Ωμ in eq. (1) is a slowly-varying function of dimensionless temperature, , and is tabulated in Table 2. kb is the Boltzmann constant and
is a characteristic energy of interaction between molecules which can be estimated by

or

where Tc and Tb are critical temperature and normal boiling point, respectively.
The thermal conductivity of the polyatomic gas is related to its viscosity by

where Rg is the gas constant.

kbT / σ | Ωμ | ΩD,12 | kbT / σ | Ωμ | ΩD,12 | kbT / σ | Ωμ | ΩD,12 |
0.30 | 2.840 | 2.649 | 1.70 | 1.249 | 1.141 | 4.2 | 0.9598 | 0.8748 |
0.35 | 2.676 | 2.468 | 1.75 | 1.235 | 1.128 | 4.3 | 0.9551 | 0.8703 |
0.40 | 2.531 | 2.314 | 1.80 | 1.222 | 1.117 | 4.4 | 0.9506 | 0.8659 |
0.45 | 2.401 | 2.182 | 1.85 | 1.209 | 1.105 | 4.5 | 0.9462 | 0.8617 |
0.50 | 2.284 | 2.066 | 1.90 | 1.198 | 1.095 | 4.6 | 0.9420 | 0.8576 |
0.55 | 2.178. | 1.965 | 1.95 | 1.186 | 1.085 | 4.7 | 0.9380 | 0.8537 |
0.60 | 2.084 | 1.877 | 2.00 | 1.176 | 1.075 | 4.8 | 0.9341 | 0.8499 |
0.65 | 1.999 | 1.799 | 2.10 | 1.156 | 1.058 | 4.9 | 0.9304 | 0.8463 |
0.70 | 1.922 | 1.729 | 220 | 1.138 | 1.042 | 5.0 | 0.9268 | 0.8428 |
0.75 | 1.853 | 1.667 | 2.30 | 1.122 | 1.027 | 6.0 | 0.8962 | 0.8129 |
0.80 | 1.790 | 1.612 | 2.40 | 1.107 | 1.013 | 7.0 | 0.8727 | 0.7898 |
0.85 | 1.734 | 1.562 | 2.50 | 1.0933 | 1.0006 | 8.0 | 0.8538 | 0.7711 |
0.90 | 1.682 | 1.517 | 2.60 | 1.0807 | 0.9890 | 9.0 | 0.8380 | 0.7555 |
0.95 | 1.636 | 1.477 | 2.7 | 1.0691 | 0.9782 | 10.0 | 0.8244 | 0.7422 |
1.00 | 1.593 | 1.440 | 2.8 | 1.0583 | 0.9682 | 12.0 | 0.8018 | 0.7202 |
1.05 | 1.554 | 1.406 | 2.9 | 1.0482 | 0.9588 | 14.0 | 0.7836 | 0.7025 |
1.10 | 1.518 | 1.375 | 3.0 | 1.0388 | 0.9500 | 16.0 | 0.7683 | 0.6878 |
1.15 | 1.485 | 1.347 | 3.1 | 1.0300 | 0.9418 | 18.0 | 0.7552 | 0.6751 |
1.20 | 1.455 | 1.320 | 3.2 | 1.0217 | 0.9340 | 20.0 | 0.7436 | 0.6640 |
1.25 | 1.427 | 1.296 | 3.3 | 1.0139 | 0.9267 | 25.0 | 0.7198 | 0.6414 |
1.30 | 1.401 | 1.274 | 3.4 | 1.0066 | 0.9197 | 30.0 | 0.7010 | 0.6235 |
1.35 | 1.377 | 1.253 | 3.5 | 0.9996 | 0.9131 | 35.0 | 0.6854 | 0.6088 |
1.40 | 1.355 | 1.234 | 3.6 | 0.9931 | 0.9068 | 40.0 | 0.6723 | 0.5964 |
1.45 | 1.334 | 1.216 | 3.7 | 0.9868 | 0.9008 | 50.0 | 0.6510 | 0.5763 |
1.50 | 1.315 | 1.199 | 3.8 | 0.9809 | 0.8952 | 75.0 | 0.6140 | 0.5415 |
1.55 | 1.297 | 1.183 | 3.9 | 0.9753 | 0.8897 | 100.0 | 0.5887 | 0.5180 |
1.60 | 1.280 | 1.168 | 4.0 | 0.9699 | 0.8845 | |||
1.65 | 1.264 | 1.154 | 4.1 | 0.9647 | 0.8796 |
For a mixture of different gases, as is usually the case in CVD processes, the viscosity and the thermal conductivity of the mixture are related to those of the individual components by


where
![{{\phi }_{ij}}=\frac{1}{\sqrt{8}}{{\left( 1+\frac{{{M}_{i}}}{{{M}_{j}}} \right)}^{-1/2}}{{\left[ 1+{{\left( \frac{{{\mu }_{i}}}{{{\mu }_{j}}} \right)}^{1/2}}{{\left( \frac{{{M}_{j}}}{{{M}_{i}}} \right)}^{1/4}} \right]}^{2}} \qquad \qquad(9)](/encyclopedia/images/math/0/8/5/085718cb2269717cb83425537408323d.png)
The specific heat of the gaseous mixture is related to those of the individual components by

For applications that involve unknown mass diffusivity, it can be estimated by

where the unit for pressure is atm and

ΩD,12 is a function of that can be obtained from Table 2 using

The concentration of the reactant is usually much lower than that of the carrier gas(es). When the reactant is a single gas diluted by the carrier gas, the diffusivity of the reactant to the carrier gaseous mixture is of interest. If the reactant is defined as component 1 in the precursor, and the carrier gases are components 2 through N, the diffusivity of the reactant – 1 – to the carrier gas mixture – m – can be obtained by

References
Bird, R.B., Stewart, W.E., and Lightfoot, E.N., 2002, Transport Phenomena, 2nd ed., John Wiley and Sons, New York.
Mahajan, R.L., 1996, “Transport Phenomena in Chemical Vapor-Deposition Systems,” Advances in Heat Transfer, Academic Press, San Diego, CA.